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110MT12 IR IGBT

110MT12

  • Model: 110MT12
  • 182 Units in Stock
  • Manufactured by: IR

Description of 110MT12

Manufacturer:Infineon
Product:IGBT Silicon Modules
Configuration:Single
Collector- Emitter Voltage VCEO Max:1700 V
Collector-Emitter Saturation Voltage:2.6 V
Continuous Collector Current at 25 C:975 A
Gate-Emitter Leakage Current:400 nA
Power Dissipation:4.8 KW
Maximum Operating Temperature:+ 125 C
Package / Case:IHM73
Maximum Gate Emitter Voltage:+/- 20 V
Minimum Operating Temperature:- 40 C
Mounting Style:SMD/SMT
Standard Pack Qty:2

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