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2PS04012E32G30866 Infineon IGBT

2PS04012E32G30866

  • Model: 2PS04012E32G30866
  • 156 Units in Stock
  • Manufactured by: Infineon

Description of 2PS04012E32G30866

Manufacturer:Infineon
Product Category:IGBT Modules
RoHS:No
Product:IGBT Silicon Modules
Configuration:Dual
Collector- Emitter Voltage VCEO Max:1200 V
Collector-Emitter Saturation Voltage:2.1 V
Continuous Collector Current at 25 C:950 A
Gate-Emitter Leakage Current:600 nA
Power Dissipation:3.9 W
Maximum Operating Temperature:+ 125 C
Package / Case:IHM
Maximum Gate Emitter Voltage:+/- 20 V
Minimum Operating Temperature:- 40 C
Mounting Style:Screw
Standard Pack Qty:8

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