2PS06012S42G30859 Infineon IGBT

larger image

2PS06012S42G30859

TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode
Powerful monolithic body diode with very low forward voltage
Body diode clamps negative voltages
Trench and fieldstop technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due to positive temperature coefficient in V_CE(sat)
Low EMI
New TO-247HC package offers increased air & creepage distances compared to TO247 package
Qualified according to JEDEC¹ for target applications
Pb-free lead plating; RoHS compliant
Halogen free (according to IEC 61249-2-21)
Complete product spectrum and PSpice models: http://www.infineon.com/igbt/

¹ J-STD-020 and JESD-022

Parameter	Symbol	Value	Unit
Collector-emitter voltage	V_CE	1600	V
DC collector current T_C = 25°C T_C = 100°C	I_C	60 30	A
Pulsed collector current, t_p limited by T_jmax	I_Cpuls	90
Turn off safe operating area (V_CE ≤ 600V, T_j ≤ 175°C)	-	90
Diode forward current T_C = 25°C T_C = 100°C	I_F	60 30
Diode pulsed current, t_p limited by T_jmax	I_Fpuls	90
Diode surge non repetitive current, t_p limited by T_jmax T_C = 25°C, t_p = 10ms, sine halfwave T_C = 25°C, t_p ≤ 2.5µs, sine halfwave T_C = 100°C, t_p ≤ 2.5µs, sine halfwave	I_FSM	50 130 120
Gate-emitter voltage Transient Gate-emitter voltage (t_p < 10 μs, D < 0.01)	V_GE	±20 ±25	V
Power dissipation T_C = 25°C	P_tot	312	W
Operating junction temperature	T_j	-40...+175	°C
Storage temperature	T_stg	-55...+175
Soldering temperature, 1.6mm (0.063 in.) from case for 10s	-	260