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2PS06017E32G30879 Infineon IGBT

2PS06017E32G30879

  • Model: 2PS06017E32G30879
  • 132 Units in Stock
  • Manufactured by: Infineon

Description of 2PS06017E32G30879

KEY PARAMETERS MAXIMUM RATINGS

ParameterSymbolValueUnit
Collector-emitter voltage, Tj=25 °CVCE1200V
DC collector current, limited by TjmaxIC1 )A
Pulsed collector current, tp limited by TjmaxI cpuls255A
Gate emitter voltageVGE±20V
Operating junction and storage temperatureTj, Ts t g-55 ... +150oC

1 ) depending on thermal properties of assembly


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