>

2PS08017E34G30881 Infineon IGBT

2PS08017E34G30881

  • Model: 2PS08017E34G30881
  • 184 Units in Stock
  • Manufactured by: Infineon

Description of 2PS08017E34G30881

Manufacturer:Infineon
Product Category:IGBT Modules
RoHS:No
Product:IGBT Silicon Modules
Configuration:Single Dual Emitter
Collector- Emitter Voltage VCEO Max:1200 V
Collector-Emitter Saturation Voltage:2.1 V
Continuous Collector Current at 25 C:370 A
Gate-Emitter Leakage Current:400 nA
Power Dissipation:1450 W
Maximum Operating Temperature:+ 125 C
Package / Case:62MM
Maximum Gate Emitter Voltage:+/- 20 V
Minimum Operating Temperature:- 40 C
Mounting Style:Screw
Standard Pack Qty:500

Request for Quote

Your Name*
Company Name*
Country*
Tel*
Email*
We will not use your email for any purpose other than to communicate with you about the information regarding IGBT Express related activity, we will not provide your email to any third party.
Comments If you're looking for other components, please enter part number, quantity in the comment box, or submit RFQ to Email info@igbtexpress.com or sales@jitcomp.com, we will find it for you, even if it didn't show in our inventory database
Part Number Quantity

Related Infineon IGBT product

2PS08017E34G282162PS08017E34G28216
2PS09012E33G27427 2PS09012E33G27427
Copyright © 2024 IGBT Express. Powered by IGBT Express, IGBT Express,fast delivered.