Description of 2PS09012E33G27427
Description
High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode
Key Parameters
Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Collector-emitter voltage | VCE | 600 | V |
DC collector current, limited by Tjmax
Tc = 25°C
Tc = 100°C | IC |
60.0
30.0
| A |
| Pulsed collector current, tp limited by Tjmax | ICpuls | 120.0
|
Turn off safe operating area
VCE ≤ 600V, Tj ≤ 175°C | - | 120.0
|
Diode forward current, limited by Tjmax
Tc = 25°C
Tc = 100°C | IF |
30.0
15.0 |
| Diode pulsed current, tp limited by Tjmax | IFpuls | 120.0 |
| Gate-emitter voltage | VGE | ±20 | V |
Short circuit withstand time
VGE = 15V, Vcc ≤ 600V, Tj ≤ 175°C
Allowed number of short circuits < 1000
Time between short circuits ≥ 1.0s
Tvj = 150°C | tsc | 5 | μs |
Power dissipation Tc = 25°C
Power dissipation Tc = 100°C | Ptot | 187.0
94.0
| W |
| Operating junction temperature | Tj | -40...+175 | °C |
| Storage temperature | Tstg | -55...+150 | °C |
Soldering temperature
wavesoldering, 1.6 mm (0.063 in.) from case for 10s | | 260
| °C |
Mounting torque, M3 screw
Maximum of mounting processes: 3
| M
| 0.06 | Nm |
