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2PS09012E33G30869 Infineon IGBT

2PS09012E33G30869

  • Model: 2PS09012E33G30869
  • 104 Units in Stock
  • Manufactured by: Infineon

Description of 2PS09012E33G30869

Manufacturer:Infineon
Product:IGBT Silicon Modules
Configuration:Hex
Collector- Emitter Voltage VCEO Max:1200 V
Collector-Emitter Saturation Voltage:2.5 V
Continuous Collector Current at 25 C:50 A
Gate-Emitter Leakage Current:200 nA
Power Dissipation:350 W
Maximum Operating Temperature:+ 150 C
Package / Case:EconoPACK 2
Packaging:Reel
Maximum Gate Emitter Voltage:20 V
Mounting Style:Screw

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