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2PS09012S43G28191 Infineon IGBT

2PS09012S43G28191

  • Model: 2PS09012S43G28191
  • 181 Units in Stock
  • Manufactured by: Infineon

Description of 2PS09012S43G28191

Manufacturer:Infineon
Product:IGBT Silicon Modules
Configuration:Triple Common Emitter Common Gate
Collector- Emitter Voltage VCEO Max:1700 V
Collector-Emitter Saturation Voltage:2.6 V
Continuous Collector Current at 25 C:3800 A
Gate-Emitter Leakage Current:400 nA
Power Dissipation:19.2 KW
Maximum Operating Temperature:+ 125 C
Package / Case:IHM190
Maximum Gate Emitter Voltage:+/- 20 V
Minimum Operating Temperature:- 40 C
Mounting Style:SMD/SMT
Standard Pack Qty:1

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