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2PS12012E33G27261 Infineon IGBT

2PS12012E33G27261

  • Model: 2PS12012E33G27261
  • 169 Units in Stock
  • Manufactured by: Infineon

Description of 2PS12012E33G27261

Manufacturer:Infineon
Product Category:IGBT Modules
RoHS:No
Product:IGBT Silicon Modules
Configuration:Array 7
Collector- Emitter Voltage VCEO Max:1200 V
Collector-Emitter Saturation Voltage:3.75 V
Continuous Collector Current at 25 C:40 A
Gate-Emitter Leakage Current:400 nA
Power Dissipation:180 W
Maximum Operating Temperature:+ 125 C
Package / Case:EconoPIM3
Maximum Gate Emitter Voltage:+/- 20 V
Minimum Operating Temperature:- 40 C
Mounting Style:Screw
Standard Pack Qty:10

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