2PS12012E33G28375 Infineon IGBT

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2PS12012E33G28375

Designed for operation above 30 kHz
NPT-Technology for 600V applications offers: parallel switching capability, moderate E_off increase with temperature, very tight parameter distribution
High ruggedness, temperature stable behaviour
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC¹ for target applications

Parameter	Symbol	Value	Unit
Collector-emitter voltage	V_CE	600	V
DC collector current T_C = 25°C T_C = 100°C	I_C	100 50	A
Pulsed collector current, t_p limited by T_jmax	I_Cpuls	150
Turn off safe operating area V_CE ≤ 600V, T_j ≤ 150°C	-	150
Avalanche energy single pulse I_C = 50A, V_CC=50V, R_GE=25Ω start T_J=25°C	E_AS	280	mJ
Gate-emitter voltage static transient (tp<1μs, D<0.05)	V_GE	±20 ±30	V
Short circuit withstand time²⁾ V_GE = 15V, V_CC ≤ 600V, T_j ≤ 150°C	t_SC	10	μs
Power dissipation T_C = 25°C	P_{t o t}	416	W
Operating junction and storage temperature	T_j , T_{s tg}	-55...+150	^oC
Time limited operating junction temperature for t < 150h	T_{j ( t l )}	175
Soldering temperature, 1.6mm (0.063 in.) from case for 10s	-	260