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2PS12012E33G30875 Infineon IGBT

2PS12012E33G30875

  • Model: 2PS12012E33G30875
  • 142 Units in Stock
  • Manufactured by: Infineon

Description of 2PS12012E33G30875

Manufacturer:Infineon
Product Category:IGBT Modules
RoHS:No
Product:IGBT Silicon Modules
Configuration:Single
Collector- Emitter Voltage VCEO Max:1200 V
Continuous Collector Current at 25 C:550 A
Power Dissipation:2700 W
Maximum Operating Temperature:+ 150 C
Package / Case:62MM
Maximum Gate Emitter Voltage:+/- 20 V
Minimum Operating Temperature:- 40 C
Mounting Style:Screw
Standard Pack Qty:500

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