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2PS12017E34G30906 Infineon IGBT

2PS12017E34G30906

  • Model: 2PS12017E34G30906
  • 154 Units in Stock
  • Manufactured by: Infineon

Description of 2PS12017E34G30906

Manufacturer:Infineon
Product Category:IGBT Modules
RoHS:No
Product:IGBT Silicon Modules
Configuration:Dual
Collector- Emitter Voltage VCEO Max:1200 V
Collector-Emitter Saturation Voltage:1.7 V
Continuous Collector Current at 25 C:850 A
Gate-Emitter Leakage Current:400 nA
Power Dissipation:2.8 KW
Maximum Operating Temperature:+ 125 C
Package / Case:IHM130
Maximum Gate Emitter Voltage:+/- 20 V
Minimum Operating Temperature:- 40 C
Mounting Style:SMD/SMT
Standard Pack Qty:8

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