2PS16012E34G30905 Infineon IGBT

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2PS16012E34G30905

Low Loss DuoPack : IGBT in TrenchStop^®-technology with soft, fast recovery anti-parallel EmCon HE diode
Very low V_CE(sat) 1.5 V (typ.)
Maximum junction temperature 175 °C
Short circuit withstand time – 5μs
Trench and fieldstop technology for 600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- low V_CE(sat) and positive temperature coefficient
Low EMI
Low gate charge
Qualified according to JEDEC¹ for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice models

¹ J-STD-020 and JESD-022

Parameter	Symbol	Value	Unit
Collector-emitter voltage	V_CE	600	V
DC collector current, limited by T_jmax T_c = 25°C T_c = 100°C	I_C	80 40	A
Pulsed collector current, tp limited by T_jmax	I_Cpuls	120
Turn off safe operating area V_CE ≤ 600V, T_j ≤ 175°C	-	120
Diode forward current, limited by T_jmax T_c = 25°C T_c = 100°C	I_F	60 30
Diode pulsed current, t_p limited by T_jmax	I_Fpuls	90
Gate-emitter voltage Tansient Gate-emitter voltage (t_p < 10 μs, D<0.01)	V_GE	±20 ±25	V
Short circuit withstand time²⁾ VGE = 15V, V_cc ≤ 400V, T_j ≤ 150°C	t_SC	5	μs
Power dissipation T_c = 25°C	P_tot	303	W
Operating junction and storage temperature	T_j	-40...+175	^oC
Storage temperature	T_stg	-55...+175
Soldering temperature, 1.6 mm (0.063 in.) from case for 10s	_-	260