Description of 2T4771NKE01W33433
APPLICATIONS
- Designed for:
- NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
- Very soft, fast recovery anti-parallel EmCon diode
- Pb-free lead plating; RoHS compliant
- Qualified according to JEDEC1 for target applications
KEY PARAMETERS Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Collector-emitter voltage | VCE | 600 | V |
DC collector current
TC = 25°C
TC = 100°C | IC | 9.4
4.9 | A |
| Pulsed collector current, tp limited by Tjmax | ICpul s | 19 | |
Turn off safe operating area
VCE ≤ 600V, Tj ≤ 150°C | - | 19 | |
Diode forward current
TC = 25°C
TC = 100°C | IF | 10
4 | |
| Diode pulsed current, tp limited by Tjmax | IFpul s | 19 |
| Gate-emitter voltage | VGE | ±20 | V |
Short circuit withstand time2
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C | tSC | 10 | µs |
Power dissipation
TC = 25°C | Pt o t | 50 | W |
| Operating junction and storage temperature | Tj , Tstg | -55...+150 | °C |
Soldering temperature
wavesoldering, 1.6 mm (0.063 in.) from case for 10s | Ts | 260 | °C |
1 J-STD-020 and JESD-022
2 Allowed number of short circuits: <1000; time between short circuits: >1s.
