Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected superfast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

Key Parameters Absolute Maximum Ratings, Tj = 25 °C Unless Otherwise Specified

Ratings	Symbol	CM200DY-12H	Units
Junction Temperature	T_j	-40 to 150	°C
Storage Temperature	T_stg	-40 to 125	°C
Collector-Emitter Voltage (G-E SHORT)	V_CES	600	Volts
Gate-Emitter Voltage (C-E SHORT)	V_GES	±20	Volts
Collector Current (Tc = 25°C)	I_C	200	Amperes
Peak Collector Current	I_CM	400*	Amperes
Emitter Current** (Tc = 25°C)	I_E	200	Amperes
Peak Emitter Current**	I_EM	400*	Amperes
Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C)	Pc	780	Watts
Mounting Torque, M5 main Terminal	–	1.47 ~ 1.96	N · m
Mounting Torque, M6 Mounting	–	1.96 ~ 2.94	N · m
Weight	–	270	Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)	V_iso	2500	Vrms