5SNA-0600G650100 ABB IGBT

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5SNA-0600G650100

Maximum rated values:

Parameter	Symbol	Conditions	min	max	Unit
Collector-emitter voltage	VCES	VGE = 0 V, Tvj ≤ 25 °C		6500	V
DC collector current	IC	Tc = 85 °C		600	A
Peak collector current	ICM	tp = 1ms, Tc = 85 °C		1200	A
Gate-emitter voltage	VGES		-20	20	V
Total power dissipation	Ptot	Tc = 25 °C, per switch (IGBT)		11900	W
DC forward current	IF			600	A
Peak forward current	IFRM			1200	A
Surge current	IFSM	VR = 0 V, Tvj = 125 °C tp = 10ms, half-sinewave		6000	A
IGBT short circuit SOA	tpsc	VCC = 4400 V, VCEM CHIP ≤ 6500 V VGE ≤ 15 V, Tvj ≤ 125 °C		10	μs
Isolation voltage Visol	Visol	1 min, f = 50 Hz		10200	V
Junction temperature	Tvj			125	°C
Junction operating temperature	Tvj(op)		-40	125	°C
Case temperature	Tc		-40	125	°C
Storage temperature	Tstg		-40	125	°C
Mounting torques 2)	Ms	Base-heatsink, M6 screws	4	6	Nm
	Mt1	Main terminals, M8 screws	8	10
	Mt2	Auxiliary terminals, M4 screws	2	3