5SNA-0750G650300 ABB IGBT

larger image

5SNA-0750G650300

Maximum rated values:

Parameter	Symbol	?Conditions	min	max	Unit
?Collector-emitter voltage	VCES	?VGE = 0 V		?6500	?V
?DC collector current	?IC	?Tc = 85 ?C		?750	?A
?Peak collector current	?ICM	?tp = 1ms, Tc = 85 ?C		?1500	?A
?Gate-emitter voltage	?VGES		?-20	?20	?V
?Total power dissipation	?Ptot	?Tc = 25 ?C, per switch (IGBT)		?9500	?W
?DC forward current	?IF			?750	?A
?Peak forward current	?IFRM			?1500	?A
?Surge current	?IFSM	?VR = 0 V, Tvj = 125 ?C ?tp = 10ms, half-sinewave		?8000	?A
?IGBT short circuit SOA	?tpsc	?VCC = 4400 V, TCEM CHIP ? 6500 V ?VGE ? 15 V, Tvj ? 125 ?C		?10	??s
?Isolation voltage Visol	Visol	?1 min, f = 50 Hz		?10200	?V
?Junction temperature	?Tvj			?125	??C
?Junction operating temperature	?Tvj(op)		?-40	?125	??C
?Case temperature	?Tc		?-40	?125	??C
?Storage temperature	?Tstg		?-40	?125	??C
Mounting torques 2)	?Ms	?Base-heatsink, M6 screws	? 4	?6	?Nm?
	?Mt1	?Main terminals, M8 screws	8	?10
	?Mt2	?Auxiliary terminals, M4 screws	2	?3