5SNA-1200E330100 ABB IGBT

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5SNA-1200E330100

Maximum rated values:

Parameter	Symbol	Conditions	min	max	Unit
Collector-emitter voltage	VCES	VGE = 0 V		1700	V
DC collector current	IC	Tc = 80 °C		800	A
Peak collector current	ICM	tp = 1ms, Tc = 80 °C		1600	A
Gate-emitter voltage	VGES		-20	20	V
Total power dissipation	Ptot	Tc = 25 °C, per switch (IGBT)		4800	W
DC forward current	IF			800	A
Peak forward current	IFRM			1600	A
Surge current	IFSM	VR = 0 V, Tvj = 125 °C tp = 10ms, half-sinewave		6600	A
IGBT short circuit SOA	tpsc	VCC = 2500 V, TCEM CHIP ≤ 3300 V VGE ≤ 15 V, Tvj ≤ 125 °C		10	μs
Isolation voltage Visol	Visol	1 min, f = 50 Hz		4000	V
Junction temperature	Tvj			150	°C
Junction operating temperature	Tvj(op)		-40	125	°C
Case temperature	Tc		-40	125	°C
Storage temperature	Tstg		-40	125	°C
Mounting torques 2)	Ms	Base-heatsink, M6 screws	4	6	Nm
	Mt1	Main terminals, M8 screws	8	10
	Mt2	Auxiliary terminals, M4 screws	2	3