5SNE-0800M170100 ABB IGBT

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5SNE-0800M170100

Maximum rated values 1)

Parameter	Symbol	Conditions	min	max	Unit
Collector-emitter voltage	V_CES	V_GE = 0 V, Tvj ≥ 25 °C		1700	V
DC collector current	I_C	T_c = 80 °C		800	A
Peak collector current	I_CM	t_p = 1 ms, T_c= 80 °C		1600	A
Gate-emitter voltage	V_GES		-20	20	V
Total power dissipation	P_tot	T_c = 25 °C, per switch (IGBT)		4800	W
DC forward current	IF			800	A
Peak forward current	I_FRM			1600	A
Surge current	I_FSM	V_R = 0 V, T_vj = 125 °C, t_p = 10 ms, half-sinewave		6600	A
IGBT short circuit SOA	t_psc	V_CC = 1200 V, V_{CEM CHIP}≤ 1700 V V_GE ≤15 V, Tvj ≤ 125 °C		10	μs
Isolation voltage	V_isol	1 min, f = 50 Hz		4000	V
Junction temperature	T_vj			150	°C
Junction operating temperature	T_vj(op)		-40	125	°C
Case temperature	T_c		-40	125	°C
Storage temperature	T_stg		-40	125	°C
Mounting torques ²⁾	Ms	Base-heatsink, M6 screws	4	6	Nm
Mounting torques ²⁾	M_t1	Main terminals, M8 screws	8	10	Nm
Mounting torques ²⁾	M_t2	Auxiliary terminals, M4 screws	2	3	Nm