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6MS06017F62G22224 Infineon IGBT

6MS06017F62G22224

  • Model: 6MS06017F62G22224
  • 144 Units in Stock
  • Manufactured by: Infineon

Description of 6MS06017F62G22224

Manufacturer:Infineon
Product Category:IGBT Modules
RoHS:RoHS Compliant
Product:IGBT Silicon Modules
Configuration:Half Bridge Module
Collector- Emitter Voltage VCEO Max:1700 V
Collector-Emitter Saturation Voltage:3.4 V
Continuous Collector Current at 25 C:72 A
Gate-Emitter Leakage Current:320 nA
Power Dissipation:500 W
Maximum Operating Temperature:+ 150 C
Package / Case:Half Bridge1
Maximum Gate Emitter Voltage:20 V
Mounting Style:Screw
Standard Pack Qty:500

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