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6PS02006E33G28997 Infineon IGBT

6PS02006E33G28997

  • Model: 6PS02006E33G28997
  • 180 Units in Stock
  • Manufactured by: Infineon

Description of 6PS02006E33G28997

Manufacturer:Infineon
Product Category:IGBT Modules
RoHS:No
Product:IGBT Silicon Modules
Configuration:Half Bridge Module
Collector- Emitter Voltage VCEO Max:1700 V
Collector-Emitter Saturation Voltage:3.4 V
Continuous Collector Current at 25 C:145 A
Gate-Emitter Leakage Current:320 nA
Power Dissipation:1 KW
Maximum Operating Temperature:+ 150 C
Package / Case:Half Bridge2
Maximum Gate Emitter Voltage:20 V
Mounting Style:Screw
Standard Pack Qty:500

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