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6PS02012E33G30186 Infineon IGBT

6PS02012E33G30186

  • Model: 6PS02012E33G30186
  • 136 Units in Stock
  • Manufactured by: Infineon

Description of 6PS02012E33G30186

Manufacturer:Infineon
Product:IGBT Silicon Modules
Configuration:Hex
Collector- Emitter Voltage VCEO Max:600 V
Collector-Emitter Saturation Voltage:1.95 V
Continuous Collector Current at 25 C:40 A
Gate-Emitter Leakage Current:400 nA
Power Dissipation:135 W
Maximum Operating Temperature:+ 125 C
Package / Case:EconoPACK 2A
Packaging:Reel
Maximum Gate Emitter Voltage:+/- 20 V
Minimum Operating Temperature:- 40 C
Mounting Style:Screw

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