Description of 6PS04012E33G28408
Description
IGBT with intergrated diode in packages offering space saving advantage
Features
TRENCHSTOP™ Reverse Conducting (RC) technology of 600V applications offering
- Optimised VCEsat and VF for low conduction losses
- Smooth switching performance leading to low EMI levels
- Very tight parameter distribution
- Operating range of 1 to 20kHz
- Maximum junction temperature 175°C
- Short circuit capability of 5μs
- Best in class current versus package size performance
- Qualified according to JEDEC for target applications
- Pb-free lead plating; RoHS compliant (for PG-TO252: solder temperature 260°C, MSL1)
Applications
Key Parameters
Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Collector-emitter voltage | VCE | 600 | V |
DC collector current, limited by Tvjmax
Tc = 25°C
Tc = 100°C | IC |
30.0
15.0
| A |
| Pulsed collector current, tp limited by Tvjmax | ICpuls | 45.0
|
Turn off safe operating area
VCE ≤ 600V, Tvj ≤ 175°C | - | 45.0
|
Diode forward current, limited by Tvjmax
Tc = 25°C
Tc = 100°C | IF |
30.0
15.0 |
| Diode pulsed current, tp limited by Tvjmax | IFpuls | 45.0 |
| Gate-emitter voltage | VGE | ±20 | V |
Short circuit withstand time
VGE = 15V, Vcc ≤ 400V, Tvj ≤ 150°C
Allowed number of short circuits < 1000
Time between short circuits ≥ 1.0s | tsc | 5 | μs |
Power dissipation Tc = 25°C
| Ptot | 250.0
| W |
| Operating junction temperature | Tj | -40...+175 | °C |
| Storage temperature | Tstg | -55...+150 | °C |
Soldering temperature
wavesoldering, 1.6 mm (0.063 in.) from case for 10s
for 10s (according to JEDEC J-STA-020A)
|
PG-TO251-3
PG-TO252-3 |
260
260
| °C |
