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BSM10GP60 Infineon IGBT

BSM10GP60

  • Model: BSM10GP60
  • 123 Units in Stock
  • Manufactured by: Infineon

Description of BSM10GP60

KEY PARAMETERS Absolute Maximum Ratings (TC=25°C)

ItemsSymbolUnitValue
Collector-Emitter VoltageVCESV1200
Gate-Emitter VoltageVGESV±20
Collector CurrentDCICA1200
1msICP2400
Forward CurrentDCIFA1200*1
1msIFM2400
Collector Power DissipationPCW8330
Junction TemperatureTj°C-40 ~ +150
Storage TemperatureTstg°C-40 ~ +125
Isolation VoltageVisoVRMS2500 (AC 1minute)
Screw TorqueTerminals (M4/M8)-N·m1.37 / 7.84*2
Mounting-2.94*3

Notes:

*1 : RMS current of diode ≤ 360 Arms

*2 : Recommended value 1.18 / 7.35 N·m

*3 : Recommended value 2.45 N·m


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