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BSM150GB170DN2_E3166 Infineon IGBT

BSM150GB170DN2_E3166

  • Model: BSM150GB170DN2_E3166
  • 269 Units in Stock
  • Manufactured by: Infineon

Description of BSM150GB170DN2_E3166

Manufacturer:Infineon
Product Category:IGBT Modules
RoHS:No
Product:IGBT Silicon Modules
Configuration:Half Bridge Module
Collector- Emitter Voltage VCEO Max:1200 V
Collector-Emitter Saturation Voltage:2.5 V
Continuous Collector Current at 25 C:145 A
Gate-Emitter Leakage Current:400 nA
Power Dissipation:700 W
Maximum Operating Temperature:+ 150 C
Package / Case:Half Bridge1
Maximum Gate Emitter Voltage:20 V
Mounting Style:Screw
Standard Pack Qty:500

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