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BSM200GB170DLC Infineon IGBT

BSM200GB170DLC

  • Model: BSM200GB170DLC
  • 359 Units in Stock
  • Manufactured by: Infineon

Description of BSM200GB170DLC

Manufacturer:Infineon
Product:IGBT Silicon Modules
Configuration:Triple Common Emitter Common Gate
Collector- Emitter Voltage VCEO Max:1200 V
Collector-Emitter Saturation Voltage:2.7 V
Continuous Collector Current at 25 C:1800 A
Gate-Emitter Leakage Current:400 nA
Power Dissipation:5 KW
Maximum Operating Temperature:+ 125 C
Package / Case:IHM190
Maximum Gate Emitter Voltage:+/- 20 V
Minimum Operating Temperature:- 40 C
Mounting Style:SMD/SMT

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