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BSM300GA170DN2_E3166 Infineon IGBT

BSM300GA170DN2_E3166

  • Model: BSM300GA170DN2_E3166
  • 134 Units in Stock
  • Manufactured by: Infineon

Description of BSM300GA170DN2_E3166

Manufacturer:Infineon
Product Category:IGBT Modules
RoHS:RoHS Compliant
Product:IGBT Silicon Modules
Configuration:Hex
Collector- Emitter Voltage VCEO Max:1200 V
Collector-Emitter Saturation Voltage:2.15 V
Continuous Collector Current at 25 C:75 A
Gate-Emitter Leakage Current:400 nA
Power Dissipation:270 W
Maximum Operating Temperature:+ 125 C
Package / Case:EconoPIM3
Maximum Gate Emitter Voltage:+/- 20 V
Minimum Operating Temperature:- 40 C
Mounting Style:Screw
Standard Pack Qty:500

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