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BSM300GA170DN2S Infineon IGBT

BSM300GA170DN2S

  • Model: BSM300GA170DN2S
  • 187 Units in Stock
  • Manufactured by: Infineon

Description of BSM300GA170DN2S

Manufacturer:Infineon
Product Category:IGBT Modules
RoHS:RoHS Compliant
Product:IGBT Silicon Modules
Configuration:Hex
Collector- Emitter Voltage VCEO Max:600 V
Collector-Emitter Saturation Voltage:1.95 V
Continuous Collector Current at 25 C:16 A
Gate-Emitter Leakage Current:400 nA
Power Dissipation:55 W
Maximum Operating Temperature:+ 125 C
Package / Case:EasyPIM2
Maximum Gate Emitter Voltage:+/- 20 V
Minimum Operating Temperature:- 40 C
Mounting Style:Screw
Standard Pack Qty:1000

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