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BSM50GD60DLCE3226 Infineon IGBT

BSM50GD60DLCE3226

  • Model: BSM50GD60DLCE3226
  • 138 Units in Stock
  • Manufactured by: Infineon

Description of BSM50GD60DLCE3226

Manufacturer:Infineon
Product Category:IGBT Modules
RoHS:No
Product:IGBT Silicon Modules
Configuration:Hex
Collector- Emitter Voltage VCEO Max:1200 V
Collector-Emitter Saturation Voltage:2.4 V
Continuous Collector Current at 25 C:45 A
Gate-Emitter Leakage Current:300 nA
Power Dissipation:230 W
Maximum Operating Temperature:+ 125 C
Package / Case:EconoPIM2
Maximum Gate Emitter Voltage:+/- 20 V
Minimum Operating Temperature:- 40 C
Mounting Style:Screw
Standard Pack Qty:500

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