>

BSM50GP60_B2 Infineon IGBT

BSM50GP60_B2

  • Model: BSM50GP60_B2
  • 364 Units in Stock
  • Manufactured by: Infineon

Description of BSM50GP60_B2

Manufacturer:Infineon
Product Category:IGBT Modules
RoHS:No
Product:IGBT Silicon Modules
Configuration:Single
Collector- Emitter Voltage VCEO Max:1700 V
Collector-Emitter Saturation Voltage:2.6 V
Continuous Collector Current at 25 C:650 A
Gate-Emitter Leakage Current:400 nA
Power Dissipation:3.1 KW
Maximum Operating Temperature:+ 125 C
Package / Case:IHM
Maximum Gate Emitter Voltage:20 V
Minimum Operating Temperature:- 40 C
Mounting Style:Screw
Standard Pack Qty:2

Request for Quote

Your Name*
Company Name*
Country*
Tel*
Email*
We will not use your email for any purpose other than to communicate with you about the information regarding IGBT Express related activity, we will not provide your email to any third party.
Comments If you're looking for other components, please enter part number, quantity in the comment box, or submit RFQ to Email info@igbtexpress.com or sales@jitcomp.com, we will find it for you, even if it didn't show in our inventory database
Part Number Quantity

Related Infineon IGBT product

BSM50GP60GBSM50GP60G
BSM50GX120DN2 BSM50GX120DN2
Copyright © 2024 IGBT Express. Powered by IGBT Express, IGBT Express,fast delivered.