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DDB2U30N08VR Infineon IGBT

DDB2U30N08VR

  • Model: DDB2U30N08VR
  • 127 Units in Stock
  • Manufactured by: Infineon

Description of DDB2U30N08VR

Key Parameters

Absolute Maximum Ratings (TC=25°C)

ItemSymbolUnitMBM600E17D
Collector Emitter VoltageVCESV1,700
Gate Emitter VoltageVGESV±20
Collector CurrentDCICA600
1msICp1,200
Forward Current DCIFA600
1msIFM1,200
Junction TemperatureTj°C-40 ~ +125
Storage TemperatureTstg°C-40 ~ +125
Isolation Voltage
VISOVRMS4,000 (AC 1 minute)
Screw Torque Terminals (M4/M8)-N·m 2 / 15            (1)
Mounting (M6)-
 6               (2)

Notes:  (1) Recommended Value 1.8±0.2 / 15+0-3 N·m             (2) Recommended Value 5.5±0.5N·m


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