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DDB6U30N08VR Infineon IGBT

DDB6U30N08VR

  • Model: DDB6U30N08VR
  • 119 Units in Stock
  • Manufactured by: Infineon

Description of DDB6U30N08VR

Key Parameters


Absolute Maximum Ratings (TC=25°C)

ItemSymbolUnitMBM1200E17D
Collector Emitter VoltageVCESV1,700
Gate Emitter VoltageVGESV±20
Collector CurrentDCICA1,200
1msICp2,400
Forward Current DCIFA1,200
1msIFM2,400
Junction TemperatureTj°C-40 ~ +125
Storage TemperatureTstg°C-40 ~ +125
Isolation Voltage
VISOVRMS4,000 (AC 50Hz, 1 minute)
Screw Torque Terminals (M4)
-N·m 2               (1)
Terminals (M8)
 15               (2)
Mounting (M6)- 6               (3)

Notes: Recommended Value  (1) 1.8±0.2 N·m,    (2) 15+0-3 N·m,    (3) 5.5±0.5N·m


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