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DF1200R12IE4_B1_S1 Infineon IGBT

DF1200R12IE4_B1_S1

  • Model: DF1200R12IE4_B1_S1
  • 326 Units in Stock
  • Manufactured by: Infineon

Description of DF1200R12IE4_B1_S1

Manufacturer:Infineon
Product:IGBT Silicon Modules
Configuration:Array 7
Collector- Emitter Voltage VCEO Max:1200 V
Continuous Collector Current at 25 C:25 A
Maximum Operating Temperature:+ 125 C
Package / Case:EASY2
Maximum Gate Emitter Voltage:+/- 20 V
Minimum Operating Temperature:- 40 C
Mounting Style:Screw
Standard Pack Qty:4

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