DF650R17IE4 Infineon IGBT

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DF650R17IE4

Model: DF650R17IE4
260 Units in Stock
Manufactured by: Infineon

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Description of DF650R17IE4

Description

Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

Key Parameters

Absolute Maximum Ratings

Ratings	Symbol	CM50TU-24F	Units
Junction Temperature	T_j	-40 to 150	°C
Storage Temperature	T_stg	-40 to 125	°C
Collector-Emitter Voltage (G-E SHORT)	V_CES	1200	Volts
Gate-Emitter Voltage (C-E SHORT)	V_GES	±20	Volts
Collector Current (T_c = 25°C)	I_C	50	Amperes
Peak Collector Current (T_j ≤ 150°C)	I_CM	100*	Amperes
Emitter Current**	I_E	50	Amperes
Peak Emitter Current**	I_EM	100*	Amperes
Maximum Collector Dissipation (T_j < 150°C)	P_c	320	Watts
Mounting Torque, M4 Main Terminal	-	15	in-lb
Mounting Torque, M5 Mounting	-	31	in-lb
Weight	-	570	Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)	V_iso	2500	Volts

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).