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DF75R12W1H4F_B11 Infineon IGBT

DF75R12W1H4F_B11

  • Model: DF75R12W1H4F_B11
  • 364 Units in Stock
  • Manufactured by: Infineon

Description of DF75R12W1H4F_B11

CategoriesDiscrete Semiconductor Products
Transistors - IGBTs - Modules
ManufacturerInfineon Technologies
Series-
Part StatusNot For New Designs
IGBT Type-
ConfigurationThree Phase Inverter
Voltage Class1200 V
ConfigurationBooster
TechnologyIGBT HighSpeed 2
IC(nom) / IF(nom)75 A
VCE(sat) Tvj=25°C typ2.1 V
VF Tvj=25°C typ1.6 V
QualificationIndustrial
HousingEasyPACKâ„¢ 1B
FeaturesPressFIT

SiC Schottky diode
Dimensions length48 mm
Dimensions width33.8 mm

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