Description of DIM200PHM33-F
Description
The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 3600A.
The DIM200PHM33-F000 is a half bridge 3300V soft punch through, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10μs short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability.
The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.
Key Parameters
| VCES | | 3300V |
| VCE(sat)* | (typ) | 2.8V |
| IC | (max) | 200A |
| IC(PK) | (max) | 400A |
* Measured at auxiliary terminals.
