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F12-25R12KT4G Infineon IGBT

F12-25R12KT4G

  • Model: F12-25R12KT4G
  • 86 Units in Stock
  • Manufactured by: Infineon

Description of F12-25R12KT4G

Description

Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

Key Parameters Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

CharacteristicsSymbolTest ConditionsMin.Typ.Max.Units
Thermal Resistance, Junction to Case*Rth(j-c)QPer IGBT 1/6 Module––0.11°C/W
Thermal Resistance, Junction to Case*Rth(j-c)DPer FWDi 1/6 Module––0.17°C/W
Contact Thermal ResistanceRth(c-f)Per 1/6 Module, Thermal Grease Applied–0.051–°C/W
External Gate ResistanceRG 1.6–21Ω

*TC, Tf measured point is just under the chips.


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