F3L30R06W1E3_B11 Infineon IGBT

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F3L30R06W1E3_B11

Short circuit withstand time – 10 µs
Designed for:
- Motor controls
- Inverter
NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC² for target applications

Parameter	Symbol	Value	Unit
Collector-emitter voltage	V_CE	600	V
DC collector current	I_C		A
T_C= 25°C		6.0
T_C= 100°C		2.9
Pulsed collector current, t_plimited by T_jmax	I_Cpuls	12
Turn off safe operating area V_CE≤ 600V, T_j≤ 150°C	-	12
Gate-emitter voltage	V_GE	±20	V
Avalanche energy, single pulse I_C= 2 A, V_CC= 50 V, R_GE= 25Ω, start at T_j= 25°C	E_AS	13	mJ
Short circuit withstand time¹⁾ V_GE= 15V, V_CC≤ 600V, T_j≤ 150°C	t_SC>	10	µs>
Power dissipation T_C= 25°C	P_tot	30	W
Operating junction and storage temperature	T_j, T_stg	-55...+150	°C
Soldering temperature, wavesoldering, 1.6mm (0.063 in.) from case for 10s	T_s	260	°C