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F3L50R06W1E3_B11 Infineon IGBT

F3L50R06W1E3_B11

  • Model: F3L50R06W1E3_B11
  • 360 Units in Stock
  • Manufactured by: Infineon

Description of F3L50R06W1E3_B11

Manufacturer:Infineon
Product:IGBT Silicon Modules
Configuration:Array 7
Collector- Emitter Voltage VCEO Max:1200 V
Continuous Collector Current at 25 C:39 A
Maximum Operating Temperature:+ 150 C
Package / Case:EASY2B
Maximum Gate Emitter Voltage:+/- 20 V
Minimum Operating Temperature:- 40 C
Mounting Style:Screw

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