>

F4-75R06W1E3 Infineon IGBT

F4-75R06W1E3

  • Model: F4-75R06W1E3
  • 104 Units in Stock
  • Manufactured by: Infineon

Description of F4-75R06W1E3

Key Parameters Maximum Ratings

ParameterSymbolValueUnit
Collector-Emitter voltage , Tj=25 °CVCE1200V
DC collector current, limited by TjmaxIC1)A
Pulsed collector current, tp limited by TjmaxIcpuls330A
Gate-Emitter voltageVGE±20V
Operating junction temperatureTj-40 ... +175°C
Short circuit data2) VGE = 15V, VCC = 800V, Tvj = 150°Ctp10µs
Reverse bias safe operating area2) (RBSOA)IC max = 220A, VCE max = 1200V, Tvj max= 150°C

1) depending on thermal properties of assembly

2) not subject to producti on test - verified by design/characterization


Request for Quote

Your Name*
Company Name*
Country*
Tel*
Email*
We will not use your email for any purpose other than to communicate with you about the information regarding IGBT Express related activity, we will not provide your email to any third party.
Comments If you're looking for other components, please enter part number, quantity in the comment box, or submit RFQ to Email info@igbtexpress.com or sales@jitcomp.com, we will find it for you, even if it didn't show in our inventory database
Part Number Quantity

Related Infineon IGBT product

F4-50R12MS4F4-50R12MS4
F4-75R12KS4 F4-75R12KS4
Copyright © 2024 IGBT Express. Powered by IGBT Express, IGBT Express,fast delivered.