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FB10R06W1E3 Infineon IGBT

FB10R06W1E3

  • Model: FB10R06W1E3
  • 101 Units in Stock
  • Manufactured by: Infineon

Description of FB10R06W1E3

Manufacturer:Infineon
Product:IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max:1700 V
Collector-Emitter Saturation Voltage:1.95 V
Continuous Collector Current at 25 C:150 A
Gate-Emitter Leakage Current:100 nA
Power Dissipation:835 W
Maximum Operating Temperature:+ 125 C
Package / Case:EconoPACK
Maximum Gate Emitter Voltage:+/ - 20 V
Minimum Operating Temperature:- 40 C
Mounting Style:Screw

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