FB20R06W1E3 Infineon IGBT

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FB20R06W1E3

Parameter	Symbol	Value	Unit
Collector-emitter voltage	V_CE	1200	V
DC collector current, limited by T_jmax T_c = 25°C T_c = 100°C	I_C	50.0 25.0	A
Pulsed collector current, t_p limited by T_jmax	I_Cpuls	100.0	A
Turn off safe operating area V_CE ≤ 1200V, T_vj ≤ 175°C	-	100.0	A
Gate-emitter voltage	V_GE	±20	V
Short circuit withstand time V_GE = 15.0V, V_cc ≤ 600V, T_vj ≤ 175°C Allowed number of short circuits < 1000 Time between short circuits: ≥ 1.0s T_vj = 150 °C	t_SC	10	µs
Power dissipation Tc = 25°C Power dissipation Tc = 100°C	P_tot	326.0 156.0	W
Operating junction temperature	T_v_j	-40...+175	°C
Storage temperature	T_stg	-55...+150	°C
Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s.		260	°C
Mounting Torque, M3 screw Maximum of mounting processes:3	M	0.6	Nm