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FD1200R17KE3-K_B2 Infineon IGBT

FD1200R17KE3-K_B2

  • Model: FD1200R17KE3-K_B2
  • 131 Units in Stock
  • Manufactured by: Infineon

Description of FD1200R17KE3-K_B2

Manufacturer:Infineon
Product Category:IGBT Modules
RoHS:RoHS Compliant
Product:IGBT Silicon Modules
Configuration:Hex
Collector- Emitter Voltage VCEO Max:1200 V
Collector-Emitter Saturation Voltage:2.5 V
Continuous Collector Current at 25 C:25 A
Gate-Emitter Leakage Current:150 nA
Power Dissipation:145 W
Maximum Operating Temperature:+ 150 C
Package / Case:EconoPACK 2
Maximum Gate Emitter Voltage:+/- 20 V
Minimum Operating Temperature:- 40 C
Mounting Style:Screw
Standard Pack Qty:500

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