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FD400R33KF2C-K Infineon IGBT

FD400R33KF2C-K

  • Model: FD400R33KF2C-K
  • 141 Units in Stock
  • Manufactured by: Infineon

Description of FD400R33KF2C-K

Manufacturer:Infineon
Product Category:IGBT Modules
RoHS:No
Product:IGBT Silicon Modules
Configuration:Triple Common Emitter Common Gate
Collector- Emitter Voltage VCEO Max:1200 V
Collector-Emitter Saturation Voltage:1.7 V
Continuous Collector Current at 25 C:2400 A
Gate-Emitter Leakage Current:400 nA
Power Dissipation:10 KW
Maximum Operating Temperature:+ 125 C
Package / Case:IHM190
Maximum Gate Emitter Voltage:+/- 20 V
Minimum Operating Temperature:- 40 C
Mounting Style:SMD/SMT
Standard Pack Qty:8

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