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FD600R17KE3_B2 Infineon IGBT

FD600R17KE3_B2

  • Model: FD600R17KE3_B2
  • 82 Units in Stock
  • Manufactured by: Infineon

Description of FD600R17KE3_B2

Manufacturer:Infineon
Product Category:IGBT Modules
RoHS:RoHS Compliant
Product:IGBT Silicon Modules
Configuration:Half Bridge Module
Collector- Emitter Voltage VCEO Max:1200 V
Collector-Emitter Saturation Voltage:2.5 V
Continuous Collector Current at 25 C:150 A
Gate-Emitter Leakage Current:200 nA
Power Dissipation:800 W
Maximum Operating Temperature:+ 150 C
Package / Case:Half Bridge2
Maximum Gate Emitter Voltage:20 V
Mounting Style:Screw
Standard Pack Qty:500

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