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FD650R17IE4 Infineon IGBT

FD650R17IE4

  • Model: FD650R17IE4
  • 324 Units in Stock
  • Manufactured by: Infineon

Description of FD650R17IE4

Manufacturer:Infineon
Product Category:IGBT Modules
RoHS:No
Product:IGBT Silicon Modules
Configuration:Hex
Collector- Emitter Voltage VCEO Max:1200 V
Collector-Emitter Saturation Voltage:2.7 V
Continuous Collector Current at 25 C:15 A
Gate-Emitter Leakage Current:120 nA
Power Dissipation:80 W
Maximum Operating Temperature:+ 150 C
Package / Case:EconoPACK 2
Maximum Gate Emitter Voltage:+/- 20 V
Minimum Operating Temperature:- 40 C
Mounting Style:Screw
Standard Pack Qty:500

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