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FD800R17KE3_B2 Infineon IGBT

FD800R17KE3_B2

  • Model: FD800R17KE3_B2
  • 104 Units in Stock
  • Manufactured by: Infineon

Description of FD800R17KE3_B2

Manufacturer:Infineon
Product Category:IGBT Modules
RoHS:No
Product:IGBT Silicon Modules
Configuration:Dual
Collector- Emitter Voltage VCEO Max:3300 V
Collector-Emitter Saturation Voltage:3.4 V
Continuous Collector Current at 25 C:660 A
Gate-Emitter Leakage Current:400 nA
Power Dissipation:4.8 KW
Maximum Operating Temperature:+ 125 C
Package / Case:IHM
Maximum Gate Emitter Voltage:+/- 20 V
Minimum Operating Temperature:- 40 C
Mounting Style:Screw
Standard Pack Qty:8

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