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FF150R12KE3_B8 Infineon IGBT

FF150R12KE3_B8

  • Model: FF150R12KE3_B8
  • 96 Units in Stock
  • Manufactured by: Infineon

Description of FF150R12KE3_B8

Manufacturer:Infineon
Product Category:IGBT Modules
RoHS:RoHS Compliant
Product:IGBT Silicon Modules
Configuration:Hex
Collector- Emitter Voltage VCEO Max:600 V
Collector-Emitter Saturation Voltage:2.45 V
Continuous Collector Current at 25 C:50 A
Gate-Emitter Leakage Current:300 nA
Power Dissipation:180 W
Maximum Operating Temperature:+ 125 C
Package / Case:EconoPIM2
Maximum Gate Emitter Voltage:+/- 20 V
Minimum Operating Temperature:- 40 C
Mounting Style:Screw
Standard Pack Qty:500

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