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FF150R12YT3 Infineon IGBT

FF150R12YT3

  • Model: FF150R12YT3
  • 111 Units in Stock
  • Manufactured by: Infineon

Description of FF150R12YT3

Description

Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Features

  • Very low VCE(sat) 1.5 V (typ.)
  • Maximum Junction Temperature 175 °C
  • Short circuit withstand time – 5μs
  • TrenchStop® and Fieldstop technology for 600 V applications offers: very tight parameter distribution and high ruggedness, temperature stable behaviour
  • Low EMI
  • Very soft, fast recovery anti-parallel EmCon HE diode
  • Qualified according to JEDEC for target applications
  • Pb-free lead plating; RoHS compliant

Applications

  • Variable Speed Drive for washing machines, air conditioners and induction cooking
  • Uninterrupted Power Supply

Key Parameters

Maximum Ratings

ParameterSymbolValueUnit
Collector-emitter voltageVCE600V
DC collector current, limited by Tjmax
Tc = 25°C
Tc = 100°C
IC
12
6
A
Pulsed collector current, tp limited by TjmaxICpuls18
Turn off safe operating area
VCE ≤ 600V, Tj ≤ 175°C
-18
Diode forward current, limited by Tjmax
Tc = 25°C
Tc = 100°C
IF
12
6
Diode pulsed current, tp limited by TjmaxIFpuls18
Gate-emitter voltageVGE±20V
Short circuit withstand time
VGE = 15V, Vcc ≤ 400V, Tj ≤ 150°C
tsc5μs
Power dissipation Tc = 25°C
Ptot88
W
Operating junction temperatureTj-40...+175°C
Storage temperatureTstg-55...+150°C
Soldering temperature
wavesoldering, 1.6 mm (0.063 in.) from case for 10s


260
°C


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