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FF200R12KE3B2HOSA1 Infineon IGBT

FF200R12KE3B2HOSA1

  • Model: FF200R12KE3B2HOSA1
  • 863 Units in Stock
  • Manufactured by: Infineon

Description of FF200R12KE3B2HOSA1

CategoriesDiscrete Semiconductor Products
Transistors - IGBTs - Modules
ManufacturerInfineon Technologies
Series-
Part StatusActive
IGBT Type-
ConfigurationHalf Bridge
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)295A
Power - Max1050W
Vce(on) (Max) @ Vge, Ic2.15V @ 15V, 200A
Current - Collector Cutoff (Max)5mA
Input Capacitance (Cies) @ Vce14nF @ 25V
InputStandard
NTC ThermistorNo
Operating Temperature-40°C ~ 125°C
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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